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BUK637-500B N-Channel MOSFET

BUK637-500B Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK637-500B *.

BUK637-500B Features

* With TO-3PN packaging
* High speed switching
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

BUK637-500B Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10 7.6 48 PD Total Dissipation 180 Tj Operat

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Datasheet Details

Part number
BUK637-500B
Manufacturer
INCHANGE
File Size
206.65 KB
Datasheet
BUK637-500B-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE BUK637-500B-like datasheet