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BUL56B Datasheet Preview

BUL56B Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
BUL56B
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 100V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.2V(Max) @ IC= 1A
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
18
A
ICM
Collector Current-peak
25
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
5
A
85
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
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BUL56B Datasheet Preview

BUL56B Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUL56B
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
100
V
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
250
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
10
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
0.2
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A
0.6
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.2A
1.2
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 7A; IB= 0.7A
1.2
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 12A; IB= 1.2A
1.8
V
ICEO
ICBO
IEBO
hFE-1
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
VCE= 90V; IB= 0
VCB= 250V; IE= 0
VCB= 250V; IE= 0, TC= 125
VEB= 9V; IC= 0
VEB= 9V; IC= 0, TC= 125
IC= 0.3A; VCE= 5V
30
100 μA
10
100
μA
10
100
μA
110
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
25
60
hFE-3
DC Current Gain
IC= 12A; VCE= 1V
5
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
100
pF
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 4V
20
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUL56B
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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