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BUL56B - NPN Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in electr

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isc Silicon NPN Power Transistor BUL56B DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 18 A ICM Collector Current-peak 25 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 5 A 85 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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