BUL56B Datasheet NPN Transistor

Manufacturer: Seme LAB

Overview: LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL56B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 • • • • 0.

Datasheet Details

Part number	BUL56B
Manufacturer	Seme LAB
File Size	19.61 KB
Description	NPN Transistor
Datasheet	BUL56B_SemeLAB.pdf

Key Features

2.54 2.54 TO220 Pin 1.
Base Pad 2.
Collector Pad 3.
Emitter.
Multi.
base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.

BUL56B Distributor

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	BUL56B	NPN Transistor	INCHANGE
	BUL56B	SILICON POWER TRANSISTOR	SavantIC

More Datasheets from Seme LAB

Part Number	Description
BUL56BSMD	NPN Transistor
BUL56A	NPN Transistor
BUL50A	NPN Transistor
BUL52	NPN Transistor
BUL52AFI	NPN Transistor
BUL52B	NPN Transistor
BUL52BFI	NPN Transistor
BUL53A	NPN Transistor
BUL53B	NPN Transistor
BUL53BSMD	NPN Transistor