| Part Number | BUL56B Datasheet |
|---|---|
| Manufacturer | Seme LAB |
| Overview |
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL56B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applicatio.
2.54 2.54
TO220
Pin 1 * Base Pad 2 * Collector Pad 3 * Emitter * Multi *base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics. |
BUL56B Datasheet and Specifications PDF
The BUL56B is a NPN Transistor.
| Part Number | BUL56B Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·Designed for use in electronic ballast applications PINNING PIN 1 2 3 Base Collector;connected to mounting base em. ector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance CO. |
| Part Number | BUL56B Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device perf. US) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.2 V VCE(sat)-2 Collector-Emitter S. |