Datasheet Details
| Part number | BUL56B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.75 KB |
| Description | NPN Transistor |
| Datasheet | BUL56B-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUL56B.
| Part number | BUL56B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.75 KB |
| Description | NPN Transistor |
| Datasheet | BUL56B-INCHANGE.pdf |
|
|
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 18 A ICM Collector Current-peak 25 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 5 A 85 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUL56B MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUL56B | NPN Transistor | Seme LAB |
 |
BUL56B | SILICON POWER TRANSISTOR | SavantIC |
|
BUL56BSMD | NPN Transistor | Seme LAB |
|
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