Collector
Emitter Sustaining Voltage
: VCEO(SUS) = 100V(Min.)
Collector Saturation Voltage
: VCE(sat) = 0.2V(Max) @ IC= 1A
High Speed Switching
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in electr
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isc Silicon NPN Power Transistor
BUL56B
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage
: VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
18
A
ICM
Collector Current-peak
25
A
IB
Base Current-Continuous
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
5
A
85
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
BUL56B Datasheet
