BUL57
BUL57 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
- Collector Saturation Voltage
: VCE(sat) = 0.65V(Max) @ IC= 2A
- High Speed Switching
APPLICATIONS
- Designed for use in lighting applications and low cost switch- mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-peak
16 A
IB Base Current-Continuous
4A
IBM Base Current-Peak
Collector Power Dissipation TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
7 85 150 -65~150
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to...
