BUL57 Datasheet | STMicroelectronics

DESCRIPTION The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds. The devices are designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BUL57 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature 700 400 9 8 16 4 7 85 -65 to 150 150 35 Value BUL57FP V V V A A A A W o C o C 1/7 Uni t January 1999 BUL57 / BUL57FP THERMAL DATA TO-220 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.47 62.5 TO-220F P 3.5 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Test Cond ition s V CE = 700 V V CE = 700 V V EC = 400 V I C = 100 m A I E = 10 m A IC IC IC IC IC = = = = = 2 3 4 5 8 A A A A A IB IB IB IB IB = = = = = 0.4 A 0.6 A 0.8 A 1 A 2 A L = 25 m H 400 9 0.65 0.75 1.2 2 2 1.2 1.6 15 6 8 1.8 60 2.6 110 1 54 1.5 90 1.6 100 40 Tj = 125 C o Min. Typ . Max. 100 500 250 Un it µA µA µA V V V V V V V V V V BE(s at)∗ h F E∗ Base-Emitt er Saturation Voltage DC Current Gain IC = 2 A IC = 5 A IC = 2 A IC = 4 A I C = 10 m A IC = 3 A I B1 = 0.6 A L = 200 µ H IC = 3 A I B1 = 0.6 A L = 200 µ H IB = 0.4 A IB = 1 A VCE = 5 V VCE = 5 V VCE = 5 V V CL = 250 V I B2 = -1.2 A V CL = 250 V I B2 = -1.2 A o Tj = 125 C...