BUL57A
BUL57A is NPN Transistor manufactured by Seme LAB.
FEATURES
2.54 2.54
TO220
Pin 1
- Base Pin 2
- Collector Pin 3
- Emitter
- Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
- Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector
- Base Voltage(IE=0) Collector
- Emitter Voltage (IB = 0) Emitter
- Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
200V 70V 10V 22A 32A 6A 80W
- 55 to +150°C
Prelim. 2/97
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
Test Conditions
Min.
70 200 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector
- Emitter Sustaining Voltage IC = 10m A Collector
- Base Breakdown Voltage Emitter
- Base Breakdown Voltage Collector
- Base Cut- Off Current Collector
- Emitter Cut- Off Current Emitter Cut- Off Current IC = 1m A IE = 1m A VCB = 200V TC = 125°C IB = 0 VEB = 9V IC = 0 IC = 0.3A IC = 5A IC = 15A IC = 1A TC = 125°C VCE = 4V VCE = 4V VCE = 4V TC = 125°C IB = 0.1A IB = 0.5A IB = 1.5A IB = 0.5A IB = 1.5A VCE = 4V f = 1MHz VCE = 60V
V 10 100 100 10 100
µA µA µA
30 25 20 0.1 0.3 1.0
90 60 50 0.2 0.6 1.5 1.2 1.4 20 V...
