STMicroelectronics BUL57FP
The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds.| Part No. | BUL57FP |
|---|---|
| Datasheet | BUL57FP Download |
| Manufacturer |  STMicroelectronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIESDESCRIPTION
The devices are designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BUL57 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature 700 400 9 8 16 4 7 85 -65 to 150 150 35 Value BUL57FP V V V A A A A W o C o C 1/7 Uni t January 1999 BUL57 / BUL57FP THERMAL DATA TO-220 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.47 62.5 TO-220F P 3.5 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO...
