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BUL57FP - NPN Transistor

General Description

The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

They use a Cellular Emitter structure with planar edge termination to enhance switching speeds.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® BUL57 BUL57FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s s s s s STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA TO-220FP FULLY ISOLATED PACKAGE (U.L. COMPLIANT) 1 2 3 1 2 3 TO-220 TO-220FP APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds.