BUL58B
BUL58B is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage
: VCEO(SUS) = 100V(Min.)
- Collector Saturation Voltage
: VCE(sat) = 0.2V(Max) @ IC= 1A
- High Speed Switching
APPLICATIONS
- Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
250 V
VCEO Collector-Emitter Voltage
100 V
VEBO Emitter-Base Voltage
10 V
IC Collector Current-Continuous
12 A
ICM Collector Current-peak
17 A
IB Base Current-Continuous
Collector Power Dissipation TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
4A 50 W 150 ℃ -55~150 ℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10m A; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1m A; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC=...
