Datasheet Details
| Part number | BUL58B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.11 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUL58B-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | BUL58B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.11 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BUL58B-InchangeSemiconductor.pdf |
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching APPLICATIONS ·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 17 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 4A 50 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL58B ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUL58B | NPN Transistor | Seme LAB |
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BUL58BSMD | NPN Transistor | Seme LAB |
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BUL58 | NPN Transistor | Seme LAB |
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BUL58A | NPN Transistor | Seme LAB |
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