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BUL58B - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A High Speed Switching APPLICATIONS

Designed for use in electronic ballast applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL58B DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching APPLICATIONS ·Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 17 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 4A 50 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.