BUL58BSMD Overview
BUL58BSMD Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 1 3 0 .7 6 (0 .0 3 0 ) m.
BUL58BSMD Key Features
- Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ra
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch
- Base Pad 2
- Collector Pad 3
- Emitter
- Triple Guard Rings for improved control of high voltages
