BUL58BSMD
BUL58BSMD is NPN Transistor manufactured by Seme LAB.
FEATURES
9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 )
9 ) 6 ) 4 )
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
- Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
SMD1 PACKAGE
Pad 1
- Base Pad 2
- Collector Pad 3
- Emitter
- Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector
- Base Voltage Collector
- Emitter Voltage (IB = 0) Emitter
- Base Voltage (IC = 0) Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Derate above 25°C when used on efficient heatsink Operating and Storage Temperature Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk
180V 90V 10V 7A 10A 2A 50W 0.28W/°C
- 65 to 200°C
Prelim. 7/00
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO h FE- DC Current Gain
Test Conditions
Min.
90 180 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector
- Emitter Sustaining Voltage IC = 10m A Collector
- Base Breakdown Voltage Emitter
- Base Breakdown Voltage Collector Cut- Off Current Collector Cut- Off Current Emitter Cut- Off Current IC = 1m A IE = 1m A VCB = 180V TC = 125°C IB = 0 IC = 0 VEB = 9V IC = 0.3A IC = 3A IC = 5A IC = 1A TC = 125°C VCE = 4V VCE = 4V VCE = 4V TC = 125°C IB = 0.1A IB = 0.3A IB = 0.6A IB = 0.3A IB = 0.5A VCE = 4V f = 1MHz VCE = 80V
V 10 100 100 10 100 m m
A A A m
30 25 20
80 60 50 0.2 0.6 1.5 1.1 2.0 20 44 V V
- VCE(sat)-...
