BUL58D Description
L= 25 mH V(BR)EBO Emitter-Base Breakdown Voltage IEB= 10mA; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A;.
BUL58D is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BUL58D | NPN Transistor |
Seme LAB |
BUL58 | NPN Transistor |
Seme LAB |
BUL58A | NPN Transistor |
Seme LAB |
BUL58B | NPN Transistor |
Seme LAB |
BUL58BSMD | NPN Transistor |
L= 25 mH V(BR)EBO Emitter-Base Breakdown Voltage IEB= 10mA; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A;.