Datasheet Details
| Part number | BUL58D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.47 KB |
| Description | Silicon NPN Power Transistor |
| Download | BUL58D Download (PDF) |
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Overview: INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification BUL58D.
| Part number | BUL58D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.47 KB |
| Description | Silicon NPN Power Transistor |
| Download | BUL58D Download (PDF) |
|
|
|
·High Voltage Capability ·High Speed Switching ·Integrated Antiparallel Collector-Emitter Diode APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Electronic transformers for halogen lamps ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage 800 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current 8A ICM Collector Peak Current 16 A IB Base Current 4A IBM Base Peak Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature 8A 85 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX UNIT 1.47 ℃/W 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Sustaining Voltage IC= 100mA ;
L= 25 mH V(BR)EBO Emitter-Base Breakdown Voltage IEB= 10mA;
IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUL58D | NPN Transistor | STMicroelectronics |
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