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BUL58D - Silicon NPN Power Transistor

Description

High Voltage Capability High Speed Switching Integrated Antiparallel Collector-Emitter Diode APPLICATIONS Electronic ballasts for fluorescent lighting Electronic transformers for halogen lamps Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE

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INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification BUL58D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Integrated Antiparallel Collector-Emitter Diode APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Electronic transformers for halogen lamps ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage 800 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current 8A ICM Collector Peak Current 16 A IB Base Current 4A IBM Base Peak Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature 8A 85 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Ju
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