BUL58D
BUL58D is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Voltage Capability
- High Speed Switching
- Integrated Antiparallel Collector-Emitter Diode
APPLICATIONS
- Electronic ballasts for fluorescent lighting
- Electronic transformers for halogen lamps
- Switch mode power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector- Emitter Voltage
800 V
VCEO Collector-Emitter Voltage
450 V
VEBO Emitter-Base Voltage
9V
IC Collector Current
8A
ICM Collector Peak Current
16 A
IB Base Current
4A
IBM Base Peak Current
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature
8A 85 W 150 ℃ -65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
MAX UNIT 1.47 ℃/W 62.5 ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
Silicon NPN Power...
