BUL58A
BUL58A is NPN Transistor manufactured by Seme LAB.
FEATURES
2.54 2.54
TO220
Pin 1
- Base Pin 2
- Collector Pin 3
- Emitter
- Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
- Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector
- Base Voltage(IE=0) Collector
- Emitter Voltage (IB = 0) Emitter
- Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
350V 160V 10V 10A 15A 3A 50W
- 55 to +150°C
Prelim. 2/97
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
Test Conditions
Min.
160 350 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector
- Emitter Sustaining Voltage IC = 10m A Collector
- Base Breakdown Voltage Emitter
- Base Breakdown Voltage Collector
- Base Cut- Off Current Collector
- Emitter Cut- Off Current Emitter Cut- Off Current IC = 1m A IE = 1m A VCB = 350V TC = 125°C IB = 0 VEB = 9V IC = 0 IC = 0.3A IC = 2A IC = 4A IC = 1A TC = 125°C VCE = 5V VCE = 5V VCE = 1V TC = 125°C IB = 0.1A IB = 0.3A IB = 0.4A IB = 0.1A IB = 0.4A VCE = 4V f = 1MHz VCE = 150V
V 10 100 100 10 100
µA µA µA
30 25 8 0.1 0.3 1.0
90...
