Datasheet Details
| Part number | BUP22 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.61 KB |
| Description | NPN Transistor |
| Datasheet |
 BUP22 Datasheet
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| Part number | BUP22 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.61 KB |
| Description | NPN Transistor |
| Datasheet |
BUP22 Datasheet
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching- regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES VCEO VEBO IC ICM IB IBM PC TJ Collector- Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 550 V 300 V 9 V 8 A 20 A 4 A 6 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUP22 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
isc Silicon NPN Power Transistor BUP22.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUP22A | Silicon NPN Power Transistor | Inchange Semiconductor |
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BUP22B | Silicon NPN Power Transistor | Inchange Semiconductor |
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BUP22BF | Silicon NPN Power Transistor | Inchange Semiconductor |
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BUP22C | Silicon NPN Power Transistor | Inchange Semiconductor |
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BUP22CF | Silicon NPN Power Transistor | Inchange Semiconductor |
| Part Number | Description |
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| BUP51 | NPN Transistor |
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