isc Silicon NPN Power Transistor
BUP22
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
300
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.67A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB= 0.67A
VCE= VCESmax;VBE= 0
VCE= VCESmax;VBE= 0; TJ= 125℃
VEB= 9V; IC=0
1.5
V
1.5
V
1
2
mA
10 mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
25
Switching Times; Resistive Load
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 6A; IB1= -IB2= 0.67A
0.5
μs
3.0
μs
0.3
μs
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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