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BUP51 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·With TO-3 packaging
·Large collector current
·Low collector saturation voltage
·High power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in DC-DC converter
·Driver of solenoid or motor
·For audio amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
175
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
80
A
ICM
Peak Collector Current
100
A
PC
Collector Power Dissipation
300
W
TJ
Junction Temperature
-55~200
Tstg
Storage Temperature
-55~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.72 /W
BUP51
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUP51 Datasheet Preview

BUP51 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 40A; IB= 4A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 40A; IB= 4A
ICEO
Collector Cutoff Current
VCE= 175V; IB=0
ICBO
Collector Cutoff Current
VCB= 250V; IE=0
hFE-1
DC Current Gain
IC= 20A; VCE= 4V
hFE-2
DC Current Gain
IC= 40A; VCE= 4V
hFE-3
DC Current Gain
IC= 70A; VCE= 4V
BUP51
MIN MAX UNIT
175
V
250
V
10
V
0.5
V
0.6
V
1.1
V
1.2
V
0.1 mA
0.1 mA
20
20
10
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUP51
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BUP51 Datasheet PDF





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