Datasheet4U Logo Datasheet4U.com

BUP51 - NPN Transistor

General Description

With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUP51 SILICON MULTI-EPITAXIAL NPN TRANSISTOR TT
BUP50A NPN Transistor Seme LAB
BUP52 SILICON MULTI-EPITAXIAL NPN TRANSISTOR TT
BUP53 SILICON MULTI-EPITAXIAL NPN TRANSISTOR TT
BUP54 NPN Transistor Seme LAB

Other Datasheets by Inchange Semiconductor

Part Number Description
BUP52 NPN Transistor
BUP22 NPN Transistor
BUP30 NPN Transistor
BUP41 Silicon NPN Power Transistor
BUP49 NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 175 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 80 A ICM Peak Collector Current 100 A PC Collector Power Dissipation 300 W TJ Junction Temperature -55~200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Juncti