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isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE>20@IC= 20A ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Ideally suited for Motor Control, Switching and Linear
Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
250
V
VCEO Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
70
A
ICM
Peak collector current
90
A
PC
Collector Power Dissipation@TC=25℃
300
W
TJ
Junction Temperature
-55~200 ℃
Tstg
Storage Temperature Range
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 0.
BUP52 Datasheet
