BUP52 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUP52 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Voltage Breakdown IC=10mA; IB=2A MIN TYP MAX UNIT 200 V 0.5 VCE(sat) Collector-Emitter Saturation Voltage IC=40A; IB=2A 1.1 VBE(sat) Base-Emitter Saturation Voltage IC=40A;.