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BUP52 - NPN Transistor

General Description

High DC Current Gain- : hFE>20@IC= 20A Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ideally suited for Motor Control, Switching and Linear Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE>20@IC= 20A ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ideally suited for Motor Control, Switching and Linear Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 70 A ICM Peak collector current 90 A PC Collector Power Dissipation@TC=25℃ 300 W TJ Junction Temperature -55~200 ℃ Tstg Storage Temperature Range -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.