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BUP52 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

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Datasheet Details

Part number BUP52
Manufacturer TT
File Size 190.65 KB
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Datasheet download datasheet BUP52 Datasheet
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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEX Collector – Emitter Voltage VBE = -1.5V 300V VCEO Collector – Emitter Voltage 200V VEBO Emitter – Base Voltage 10V IC Continuous Collector Current 70A ICM Peak Collector Current 90A PD Total Power Dissipation at TC = 25°C 300W Derate Above 25°C 1.72W/°C TJ Junction Temperature Range -55 to +200°C Tstg Storage Temperature Range -55 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.
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