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Inchange Semiconductor
BUR20
DESCRIPTION - High DC Current Gain-h FE=10(Min)@IC = 50A - Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in high power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ 250 Junction Temperature ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to...