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BUR20 Datasheet Preview

BUR20 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High DC Current Gain-hFE=10(Min)@IC = 50A
·Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 25A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high power amplifier and switching
circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
50
A
IB
Base Current-Continuous
15
A
PC
Collector Power Dissipation @TC=25250
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.584 /W
BUR20
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUR20 Datasheet Preview

BUR20 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUR20
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0
125
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 25A; IB=2.5A
1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB=10A
3.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 25A; IB=2.5A
2.0
V
VBE(on) Base-Emitter On Voltage
IC= 25A ; VCE=2V
2.0
V
ICEO
Collector Cutoff Current
VCE=125V; IB=0
0.5 mA
ICBO
Collector Cutoff Current
VCB= 200V; IC=0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
0.1 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
60 200
hFE-2
DC Current Gain
IC= 25A ; VCE= 2V
20
70
hFE-3
DC Current Gain
IC= 50A ; VCE= 4V
10
fT
Current Gain-Bandwidth Product
IC= 0.5A ; VCE= 10V;f=1.0MHz
10
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUR20
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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