BUR20 Overview
·High DC Current Gain-hFE=10(Min)@IC = 50A ·Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power amplifier and switching circuits applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUR20 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN...