Download BUR22 Datasheet PDF
Inchange Semiconductor
BUR22
DESCRIPTION - Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 20A - High Switching Speed - High DC Current Gain- : h FE= 10(Min.) @IC= 20A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Tj Junction Temperature ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~200 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7...