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isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-hFE=10(Min)@IC = 50A ·Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power amplifier and switching
circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
50
A
IB
Base Current-Continuous
15
A
PC
Collector Power Dissipation @TC=25℃ 250
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 0.
BUR20 Datasheet
