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BUR22 Datasheet Preview

BUR22 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V (Max.) @IC= 20A
·High Switching Speed
·High DC Current Gain-
: hFE= 10(Min.) @IC= 20A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current, high speed, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
350
V
250
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
40
A
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
50
A
8
A
250
W
200
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~200
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.7 /W
BUR22
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUR22 Datasheet Preview

BUR22 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUR22
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
250
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB=2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 40A ;IB= 10A
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A; IB=2A
ICEO
Collector Cutoff Current
VCE= 250V; IB= 0
ICBO
Collector Cutoff Current
VCB= 350V; IC=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
60
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
20
hFE-3
DC Current Gain
IC= 20A ; VCE= 4V
10
fT
Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V, ftest= 1MHz
10
V
V
1.0
V
3.0
V
2.0
V
0.5 mA
0.1 mA
0.1 mA
200
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUR22
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BUR22 Datasheet PDF





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