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BUV47AFI Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V(Max.)@IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 220V switch mode power supply, DC and AC motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCES Collector-Emitter Voltage VBE= 0 1000 VCEO Collector-Emitter Voltage 450 UNIT V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 9 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 8 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 55 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.27 ℃/W BUV47AFI isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUV47AFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;

Overview

isc Silicon NPN Power Transistor.