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BUV47AFI Datasheet Preview

BUV47AFI Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.)
·Collector-Emitter Saturation Voltage-
:VCE(sat)= 1.5V(Max.)@IC= 5A
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for 220V switch mode power supply, DC and AC
motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCES
Collector-Emitter Voltage
VBE= 0
1000
VCEO Collector-Emitter Voltage
450
UNIT
V
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
9
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
8
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
10
A
55
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.27 /W
BUV47AFI
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUV47AFI Datasheet Preview

BUV47AFI Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUV47AFI
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
MIN TYP. MAX UNIT
450
V
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A
3.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICEO
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
Switching Times, Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 5A; IB= 1A
VCE= 450V;IB= 0
VCE=RatedVCES ;VBE= 0
VCE=RatedVCES ;VBE= 0;TC=125
VEB= 5V; IC= 0
IC= 5A; IB1= -IB2= 1A; VCC= 150V
1.6
V
1.0 mA
0.4
3.0
mA
1.0 mA
0.7 μs
3.0 μs
0.8 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BUV47AFI
Description NPN Transistor
Maker INCHANGE
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