Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B
High Switching Speed
High Power Dissipation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high voltage
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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B
·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUW41
450
VCEV
Collector-Emitter Voltage VBE= -1.
BUW41 Datasheet
