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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 150V(Min)- BUX17 = 250V(Min)- BUX17A = 300V(Min)- BUX17B = 350V(Min)- BUX17C
·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BUX17
250
VCEV
Collector-Emitter Voltage VBE= -1.
BUX17 Datasheet
