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BUX20 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and linear applications in military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO(SUS) Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A ICM Collector Current-Peak 60 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 10 A 350 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W BUX20 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 25A;

Overview

isc Silicon NPN Power Transistor.