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isc Silicon NPN Power Transistors
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUX46 450V (Min)-BUX46A
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
BUX46
850
V
BUX46A 1000
VCEO
Collector-Emitter Voltage
BUX46
400
V
BUX46A
450
VEBO IC ICM PC Tj Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
Storage Temperature Range
5
V
3.