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BUX48C Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Voltage Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and industrial applications from single and three-phase mains.

Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCER VCES Collector-Emitter Voltage RBE= 10Ω Collector-Emitter Voltage VBE= 0 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak tp<5ms ICP Collector Current-Peak tp<20μs IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1200 V 1200 V 700 V 7 V 15 A 30 A 55 A 4 A 20 A 175 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W BUX48C isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB= 0 VCBO(SUS) Collector-Emitter Sustaining Voltage IE= 1mA;

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