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BUX67 - NPN Transistor

General Description

Contunuous Collector Current-IC= 2A Power Dissipation-PD=35W @TC= 25℃ Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and l

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isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX67 200 BUX67A 300 VCBO Collector-Base Voltage V BUX67B 350 BUX67C 400 BUX67 150 BUX67A 250 VCEO Collector-Emitter Voltage V BUX67B 300 BUX67C 350 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2.