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BUX67B - NPN Transistor

Download the BUX67B datasheet PDF. This datasheet also covers the BUX67 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Contunuous Collector Current-IC= 2A Power Dissipation-PD=35W @TC= 25℃ Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and l

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Note: The manufacturer provides a single datasheet file (BUX67-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX67 200 BUX67A 300 VCBO Collector-Base Voltage V BUX67B 350 BUX67C 400 BUX67 150 BUX67A 250 VCEO Collector-Emitter Voltage V BUX67B 300 BUX67C 350 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2.