900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BUX84A Datasheet Preview

BUX84A Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUX84A
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·High Speed Switching
·High Reliability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage,high-speed,power switching
regulators,converters,inverters,motor control system.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
3
A
IB
Base Current
0.75
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
1
A
40
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 2.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUX84A Datasheet Preview

BUX84A Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUX84A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
400
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.3A; IB= 0.03A
0.8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 1A; IB= 0.2A
VCB= 800V; IE= 0
VCB= 800V; IE= 0;TC=125
VEB= 5V; IC= 0
1.1
V
0.2
1.5
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
20
100
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
15
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V, ftest= 1MHz
20
MHz
Switching Times ;Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 1A;IB1= 0.2A; IB2= -0.4A;
VCC= 250V
0.2 0.5 μs
2.0 3.5 μs
0.4
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUX84A
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

BUX84A Datasheet PDF





Similar Datasheet

1 BUX84 Silicon diffused power transistors
NXP
2 BUX84 NPN SILICON POWER TRANSISTOR
Bourns Electronic Solutions
3 BUX84 (BUX84 / BUX85) Silicon diffused power transistors
Comset Semiconductors
4 BUX84 NPN Transistor
INCHANGE
5 BUX84A NPN Transistor
INCHANGE
6 BUX84F Silicon diffused power transistors
NXP
7 BUX84F (BUX84F / BUX85F) SILICON POWER TRANSISTOR
SavantIC
8 BUX84F NPN Transistor
INCHANGE
9 BUX84S NPN high voltage Power transistor
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy