Datasheet4U Logo Datasheet4U.com

BUX98AP - Silicon NPN Power Transistor

Description

High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency and efficiency converters Linear and switching industrial equipment ABSOLUTE MAXIMUM RAT

📥 Download Datasheet

📁 Similar Datasheet

  • BUX98AP - HIGH POWER NPN SILICON TRANSISTOR (STMicroelectronics)
  • BUX98APW - HIGH VOLTAGE NPN POWER TRANSISTOR (ST Microelectronics)
  • BUX98A - HIGH VOLTAGE FAST SWITCHING TRANSISTOR (Seme LAB)
  • BUX98A - High power NPN transistor (STMicroelectronics)
  • BUX98A - SILICON POWER TRANSISTOR (SavantIC)
  • BUX98A - HIGH VOLTAGE FAST SWITCHING (Comset Semiconductors)
  • BUX98 - HIGH POWER NPN SILICON TRANSISTORS (STMicroelectronics)
  • BUX98 - HIGH VOLTAGE FAST SWITCHING TRANSISTOR (Seme LAB)
  • BUX98 - SILICON POWER TRANSISTOR (SavantIC)
  • BUX98 - HIGH VOLTAGE FAST SWITCHING (Comset Semiconductors)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency and efficiency converters ·Linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 24 A ICM Collector Current-peak ( tp <5 ms ) 36 A IB Base Current-Continuous 5 A IBM Base Current-peak ( tp <5 ms ) PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS
Published: |