Datasheet Details
| Part number | BUX98AP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 60.22 KB |
| Description | HIGH POWER NPN SILICON TRANSISTOR |
| Download | BUX98AP Download (PDF) |
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Overview: BUX98AP HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED APPLICATIONS s HIGH FREQUENCY AND.
| Part number | BUX98AP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 60.22 KB |
| Description | HIGH POWER NPN SILICON TRANSISTOR |
| Download | BUX98AP Download (PDF) |
|
|
|
The BUX98AP is a silicon multiepitaxial mesa NPN transistor in jedec TO-218 plastic package, intended for use in industrial applications from single and three-phase mains operation.
3 2 1 TO-218 (SOT-93) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCER VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (RBE = ≤ 10 Ω) Collector-Base Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Power Dissipation at Tcase < 25 oC Storage Temperature Max Operating Junction Temperature June 1997 Value 1000 1000 450 7 24 36 5 8 200 -65 to 150 150 Unit V V V V A A A A W oC oC 1/4 BUX98AP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.63 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICER Collector Cut-off Current (RBE = 10 Ω) VCE = VCES VCE = VCES TCASE = 125 oC ICES Collector Cut-off Current (VBE = 0 ) VCE = VCES VCE = VCES TCASE = 125 oC ICEO IEBO Collector Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) VCE = VCEO VEB = 5 V VCEO(sus)∗ Collector-Emitter Sustaining Voltage IC = 200 mA VCER(sus)∗ Collector-Emitter Sustaining Voltage L = 2mH IC = 1 A VCE(sat)∗ Collector-Emitter Saturation Voltage IC = 16 A IB = 3.2 A VBE(sat)∗ Base-Emitter Saturation Voltage IC = 16 A IB = 3.2 A ton Turn-on Time VCC = 150 V IC = 20 A ts Storage Time IB1 = - IB2 = 4 A tf Fall Time ton Turn-on Time VCC = 150 V IC = 16 A ts Storage Time IB1 = - IB2 = 3.2 A tf Fall Time ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUX98AP | Silicon NPN Power Transistor | INCHANGE |
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BUX98APW | HIGH VOLTAGE NPN POWER TRANSISTOR | ST Microelectronics |
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BUX98A | HIGH VOLTAGE FAST SWITCHING TRANSISTOR | Seme LAB |
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BUX98A | SILICON POWER TRANSISTOR | SavantIC |
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BUX98A | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| BUX98A | High power NPN transistor |
| BUX98 | HIGH POWER NPN SILICON TRANSISTORS |
| BUX98C | HIGH POWER NPN SILICON TRANSISTOR |
| BUX10 | HIGH POWER NPN SILICON TRANSISTOR |
| BUX348 | FAST-SWITCHING POWER TRANSISTOR |
| BUX41 | HIGH CURRENT NPN SILICON TRANSISTOR |
| BUX47 | HIGH VOLTAGE POWER SWITCH |
| BUX48 | High voltage fast-switching NPN power transistors |
| BUX48A | High voltage fast-switching NPN power transistors |
| BUX48C | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |