High Voltage Capability
High Current Capability
Fast Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High frequency and efficiency converters
Linear and switching industrial equipment
ABSOLUTE MAXIMUM RAT
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency and efficiency converters ·Linear and switching industrial equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
24
A
ICM
Collector Current-peak ( tp <5 ms )
36
A
IB
Base Current-Continuous
5
A
IBM
Base Current-peak ( tp <5 ms )
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
8
A
200
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
BUX98AP Datasheet
