Datasheet Details
| Part number | BUY22 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.97 KB |
| Description | NPN Transistor |
| Download | BUY22 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BUY22.
| Part number | BUY22 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.97 KB |
| Description | NPN Transistor |
| Download | BUY22 Download (PDF) |
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·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 230V(Min.) ·Excellent Safe Operating Area ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 2 A 85 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUY22 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 230 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A;
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