Datasheet Details
| Part number | BUY29 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.12 KB |
| Description | NPN Transistor |
| Datasheet | BUY29-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUY29.
| Part number | BUY29 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.12 KB |
| Description | NPN Transistor |
| Datasheet | BUY29-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 200V(Min.) ·Excellent Safe Operating Area ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 2 A 125 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.17 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
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