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BUY71 - NPN Transistor

General Description

High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in high voltage CRT scanning applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high voltage CRT scanning applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BUY71 · isc website：www.iscsemi.