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BUY79 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 350V(Min.) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high-speed power switches at

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 350V(Min.) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switches at high voltages.