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BUZ45B Datasheet Preview

BUZ45B Datasheet

N-Channel MOSFET

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isc N-Channel Mosfet Transistor
·FEATURES
·Static Drain-Source On-Resistance
: RDS(on) = 0.5Ω(Max)
·SOA is Power Dissipation Limited
·High speed switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
Designed for applications such as switching regulators, switching
converters, motor drivers,relay drivers and drivers for high power
bipolar switching transistors requiring high speed and low gate
drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=35
10
A
IDM
Drain Current-Single Plused
40
A
Ptot
Total Dissipation@TC=25
125
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 /W
Rth j-a Thermal Resistance,Junction to Ambient
35 /W
BUZ45B
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUZ45B Datasheet Preview

BUZ45B Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUZ45B
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=0.25mA
500
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.1
4.0
V
VSD
Diode Forward On-voltage
IS= 20A ;VGS= 0
1.7
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 5A
0.5
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
250 µA
Gfs
Forward Transconductance
VDS= 25VID=5A
2.7
S
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=2.9A;
VDD=30V;
RGS=50Ω
75
120
ns
430
tf
Fall Time
140
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BUZ45B
Description N-Channel MOSFET
Maker INCHANGE
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