Datasheet Details
| Part number | C5248 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 257.58 KB |
| Description | 2SC5248 |
| Datasheet |
 C5248 Datasheet
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| Part number | C5248 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 257.58 KB |
| Description | 2SC5248 |
| Datasheet |
C5248 Datasheet
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ 1.5 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website： Free Datasheet http://www.Datasheet-PDF.com/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5248 TYP.
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
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