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isc Thyristors
INCHANGE Semiconductor
CLA30E1200PB
DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater
parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) Average forward current
IT(RMS) RMS on-state current
ITSM
Surge non-repetitive on-state current ( 1/2 cycle,sine wave;50HZ;Tc=125℃ )
PG(AV) Average gate power dissipation
Tc=150℃ Tc=150℃
Tp=8.