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CLA30E1200HB Datasheet Thyristors

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors.

General Description

·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=45℃ ) PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature INCHANGE Semiconductor CLA30E1200HB MIN UNIT 1200 V 1200 V Tc=120℃ 30 A 47 A 50HZ 300 60HZ 325 A 0.5 W -40~125 ℃ -40~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor CLA30E1200HB ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 30A;tp=380μs IGT Gate-trigger current VD = 6V VGT Gate-trigger voltage VD = 6V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 2 mA 1.28 V 28 mA 1.3 V 0.5 ℃/W NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

The information contained herein is presented only as a guide for the applications of our products.

ISC products are intended for usage in general electronic equipment.

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