| Part Number | CLA30E1200HB |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Swi. NS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 30A;tp=380μs IGT Gate-trigger current VD = 6V VGT Gate-trigger voltage VD = 6V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 2 m. |