Datasheet Details
| Part number | D45H2A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.01 KB |
| Description | PNP Transistor |
| Datasheet |
 D45H2A Datasheet
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| Part number | D45H2A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.01 KB |
| Description | PNP Transistor |
| Datasheet |
D45H2A Datasheet
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·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This device is designed for power amplifier,regulator and Switching circuits where speed is important ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range -16 A 60 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W D45H2A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-EmitterSaturation Voltage IC= -8A ;IB= -0.4 A VBE(sat) Base-Emitter Saturation Voltage IC= -8A ;IB= -0.8 A ICES Collector Cutoff Current VCE=Rated VCEO;
VBE= 0 IEBO Emitter Cutoff Current VEB= -5V;
IC= 0 hFE-1 DC Current Gain IC= -8A ;
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