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D45H2A Datasheet Preview

D45H2A Datasheet

PNP Transistor

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isc Silicon PNP Power Transistors
DESCRIPTION
·Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A
·Fast Switching Speeds
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·This device is designed for power amplifier,regulator and
Switching circuits where speed is important
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
-16
A
60
W
-55~150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.1 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
D45H2A
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

D45H2A Datasheet Preview

D45H2A Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-EmitterSaturation Voltage
IC= -8A ;IB= -0.4 A
VBE(sat) Base-Emitter Saturation Voltage
IC= -8A ;IB= -0.8 A
ICES
Collector Cutoff Current
VCE=Rated VCEO; VBE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -8A ; VCE= -5V
hFE-2
DC Current Gain
IC= -10A ; VCE= -5V
hFE-3
DC Current Gain
IC= -12A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC=-0.5A;VCE=-10V;
D45H2A
MIN TYP MAX UNIT
-1.0 V
-1.5 V
-10 μA
-100 μA
100
80
65
25
MHz
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number D45H2A
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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D45H2A Datasheet PDF





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