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D823 - Silicon NPN Power Transistor

Description

Collector Current: IC= 6A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) APPLICATIONS

Designed for B/W TV horizontal output applications.

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    INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD823 DESCRIPTION ·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) APPLICATIONS ·Designed for B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 90 V 7 V 6 A 10 A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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