Datasheet Details
| Part number | DK151G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.95 KB |
| Description | NPN Transistor |
| Datasheet | DK151G-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | DK151G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.95 KB |
| Description | NPN Transistor |
| Datasheet | DK151G-INCHANGE.pdf |
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·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 20 A PC Collector Power Dissipation 150 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.66 ℃/W DK151G isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Part Number | Description |
|---|---|
| DK151F | NPN Transistor |