DMG4N65CTI - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	DMG4N65CTI
Manufacturer	INCHANGE
File Size	247.47 KB
Description	N-Channel MOSFET
Datasheet	DMG4N65CTI Datasheet
Additional preview pages of the DMG4N65CTI datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 6 A PD Total Dissipation @TC=25℃ 8.35 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c T

Features

Drain Current.
ID= 4A@ TC=25℃.
Drain Source Voltage- : VDSS= 650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: May 9, 2021 |