Datasheet4U Logo Datasheet4U.com

DMG4N60SK3 - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID= 3.7A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – DMG4N60SK3

Datasheet Details

Part number DMG4N60SK3
Manufacturer INCHANGE
File Size 261.47 KB
Description N-Channel MOSFET
Datasheet download datasheet DMG4N60SK3 Datasheet
Additional preview pages of the DMG4N60SK3 datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 V ±30 V ID Drain Current-Continuous 3.7 A IDM Drain Current-Single Pluse 5 A PD Total Dissipation @TC=25℃ 48 W TJ Max.
Published: |