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DMG4N60SK3 - N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Motor controls Backlighting DC-DC converters Power management func

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • Low Gate Input Resistance.
  • Low Input Capacitance.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription (Reference)

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SK3 Green 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS (@ TJ Max) 650V RDS(ON) Max 2.3Ω @ VGS = 10V ID TC = +25°C 3.7A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Motor controls  Backlighting  DC-DC converters  Power management functions Features  100% Unclamped Inductive Switch (UIS) Test in Production  Low Gate Input Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.