DMJ70H900HJ3
DMJ70H900HJ3 is N-Channel MOSFET manufactured by Inchange Semiconductor.
Features
- Drain Current
- ID= 7.0A@ TC=25℃
- Drain Source Voltage-
: VDSS= 700V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 0.9Ω(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
- Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
±30
Drain Current-Continuous
Drain Current-Single Pluse
Total Dissipation @TC=25℃
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to...
