Part DMN60H4D5SK3
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 261.20 KB
Inchange Semiconductor

DMN60H4D5SK3 Overview

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 V ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 2.6 A PD Total Dissipation @TC=25℃ 41 W TJ Max.

Key Features

  • Drain Current –ID= 2.5A@ TC=25℃
  • Drain Source Voltage- : VDSS= 600V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation